Heterogeneous microstructure of Ti-6Al-4V and its effect on superplastic deformationKIM, T.-W.Scripta materialia. 2001, Vol 45, Num 8, pp 923-929, issn 1359-6462Article

Enhancement of the intersubband Stark effect in strained In_xGa_1-xAs/In_yAl_1-yAs asymmetric step quantum wellsKIM, T. W.Applied surface science. 1998, Vol 125, Num 2, pp 213-216, issn 0169-4332Article

Probabilistic modeling the deformation and failure in heterogeneous microstructure of Ti-6Al-4VKIM, T.-W.Journal of materials science. 2004, Vol 39, Num 7, pp 2597-2599, issn 0022-2461, 3 p.Article

Strain effects and crystal structures of the In_xGa_1-xAs active layer in the highly lattice-mismatched In_xGa_1-xAs/InP modulation-doped coupled double quantum wellsKIM, T. W.Solid state communications. 1999, Vol 110, Num 2, pp 69-73, issn 0038-1098Article

Magnetotransport, optical, and electronic subband studies of In_0.53Ga_0.47As/InP one-side modulation-doped single quantum wellsKIM, T. W.Applied surface science. 1998, Vol 126, Num 3-4, pp 332-336, issn 0169-4332Article

Effect of an applied electric field on electronic subbands in In_0.53Ga_0.47As/In_0.52Al_0.48As double quantum wellsKIM, T. W.Solid state communications. 1997, Vol 104, Num 8, pp 495-498, issn 0038-1098Article

The dependence of the optical properties on the As mole fraction in modulation-doped InAs_xP_1-x/InP strained single quantum wellsKIM, T. W.Solid state communications. 1998, Vol 106, Num 1, pp 17-20, issn 0038-1098Article

Properties of CdTe/InSb heterostructures grown by temperature gradient vapor transport depositionKIM, T. W.Solid state communications. 1992, Vol 83, Num 11, pp 927-930, issn 0038-1098Article

Evolution of probability functions in heterogeneous microstructure of Ti-6Al-4VKIM, T.-W.Journal of materials science letters. 2002, Vol 21, Num 23, pp 1839-1841, issn 0261-8028, 3 p.Article

Electronic subband studies of InP/InAs/In_xGa_1-xAs asymmetric double quantum wellsKIM, T. W.Solid state communications. 1995, Vol 94, Num 11, pp 939-942, issn 0038-1098Article

Dependence of the structural, the electrical, and the optical properties on the Ar/O₂ flow rate ratios for SnO₂ thin films grown on p-InSb (111) substratesKIM, T. W.Materials research bulletin. 2001, Vol 36, Num 1-2, pp 349-353, issn 0025-5408Article

Volume fraction aspects of the heterogeneous microstructures in superplastic Ti-6Al-4VKIM, T.-W.Journal of materials science letters. 2001, Vol 20, Num 15, pp 1443-1445, issn 0261-8028Article

Electron occupation in subbands dependent on the indium mole fraction in In_xGa_1-xAs/In_0.52Al_0.48As one-side-modulation-doped quantum wellsKIM, T. W; JUNG, M.Solid state communications. 1995, Vol 94, Num 4, pp 305-308, issn 0038-1098Article

Determination of the carrier density and the effective mass of the two-dimensional electron gas in asymmetric GaAs/In_0.18Ga_0.82As/Al_0.25Ga_0.75As modulation-doped strained single quantum wellsJUNG, M; KIM, T. W.Applied surface science. 1999, Vol 147, Num 1-4, pp 1-5, issn 0169-4332Article

Magnetotransport studies of the two-dimensional electron gas in modulation-doped Al_xGa_1-xAs/In_yGa_1-yAs/GaAs asymmetric step quantum wellsKIM, T. W; JUNG, M.Solid state communications. 1999, Vol 111, Num 2, pp 89-94, issn 0038-1098Article

Electrical transport studies of the two-dimensional electron gas at In_xGa_1-xAs/InP heterointerfaces grown by MOCVDKIM, T. W; SEO, Y.Physica status solidi. A. Applied research. 1992, Vol 132, Num 1, pp K27-K30, issn 0031-8965Article

Magnetotransport, excitonic transition and electronic structure studies of modulation-doped In_xGa_1-xAs/In_yAl_1-yAs asymmetric coupled double quantum wellsKIM, T. W; JUNG, M.Solid state communications. 1999, Vol 109, Num 7, pp 483-488, issn 0038-1098Article

Magnetotransport, excitonic transition and electronic subband studies in modulation-doped In_xGa_1-xAs/In_yAl_1-yAs step quantum wellsKIM, T. W; JUNG, M.Solid state communications. 1999, Vol 112, Num 2, pp 79-83, issn 0038-1098Article

Electron and optical phonon interaction in the two-dimensional electron gas in an In_0.52Al_0.48As/In_0.53Ga_0.47As single quantum wellKIM, T. W; JUNG, M.Solid state communications. 1994, Vol 91, Num 9, pp 765-768, issn 0038-1098Article

Microstructural and electrical properties of MgO thin films grown on p-GaAs. (100) substratesKIM, T. W; YOU, Y. S.Materials research bulletin. 2001, Vol 36, Num 3-4, pp 747-754, issn 0025-5408Article

Microstructural and electrical properties of MgO thin films grown on p-InP (100) substrates at low temperatureKIM, T. W; YOU, Y. S.Applied surface science. 2001, Vol 180, Num 1-2, pp 162-167, issn 0169-4332Article

Zero bit error rate ID generation circuit using via formation probability in 0.18 μm CMOS processKIM, T. W; CHOI, B. D; KIM, D. K et al.Electronics letters. 2014, Vol 50, Num 12, pp 876-877, issn 0013-5194, 2 p.Article

Properties of 'bulk' GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentrationKIM, T. W; FORGHANI, K; MAWST, L. J et al.Journal of crystal growth. 2014, Vol 393, pp 70-74, issn 0022-0248, 5 p.Conference Paper

60 GHz beamforming using in-package bondwire antenna arrayJEONG, Y. S; KANG, M. K; KIM, T. W et al.Electronics letters. 2010, Vol 46, Num 15, pp 1047-1048, issn 0013-5194, 2 p.Article

Effect of gas-mixing and substrate temperatures on structural properties of GaN nanorods grown on Si (111) substrates by using hydride vapor-phase epitaxyLEE, K. H; LEE, J. Y; KWON, Y. H et al.Journal of crystal growth. 2009, Vol 311, Num 2, pp 244-248, issn 0022-0248, 5 p.Article